MINORITY-CARRIER LIFETIME IN GOLD-DIFFUSED SILICON AT HIGH CARRIER CONCENTRATIONS

被引：12
|
作者：
SCHMID, W
REINER, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 09期
关键词：
D O I：
10.1063/1.331542
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：6250 / 6252
页数：3
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