MINORITY-CARRIER LIFETIME IN GOLD-DIFFUSED SILICON AT HIGH CARRIER CONCENTRATIONS

被引：12

|

作者：

SCHMID, W

REINER, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.331542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：6250 / 6252

页数：3

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