Performance and Properties of Ultra-Thin Silicon Nitride X-ray Windows

被引：13

作者：

Torma, Pekka T. ^{[1
]}

Kostamo, Jari ^{[1
]}

Sipila, Heikki ^{[1
]}

Mattila, Marco ^{[1
,2
]}

Kostamo, Pasi ^{[1
]}

Kostamo, Esa ^{[1
]}

Lipsanen, Harri ^{[2
]}

Laubis, Christian ^{[3
]}

Scholze, Frank ^{[3
]}

Nelms, Nick ^{[4
]}

Shortt, Brian ^{[4
]}

Bavdaz, Marcos ^{[4
]}

机构：

[1] HS Foils Oy, Espoo 02150, Finland

[2] Aalto Univ, Dept Micro & Nanosci, Micronova, Aalto 00076, Finland

[3] Phys Tech Bundesanstalt, D-10587 Berlin, Germany

[4] ESA ESTEC, NL-2200 AG Noordwijk, Netherlands

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 01期

关键词：

Optical films; space technology; X-ray applications; X-ray detectors; X-ray filters; X-ray windows; CHEMICAL-VAPOR-DEPOSITION; SYNCHROTRON-RADIATION; HIGH-RESOLUTION; EUV METROLOGY; DIAMOND; PTB; ABSORPTION; DETECTORS; OPTICS; FILMS;

D O I：

10.1109/TNS.2014.2298434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spectral transmittance of a new generation of SiN based X-ray windows is characterized. The windows are strengthened by low aspect-ratio support grid. As expected for this unprecedented thin window material, the transmittance in the soft X-ray spectral region outperforms the present technologies. A detailed study of the various performance properties of the fabricated SiN X-ray windows is presented. Besides their high transmittance, the windows also have high uniformity, high mechanical strength and good leak tightness. The windows can withstand temperatures from cryogenic range to approximately 250 degrees C. SiN foils are the first real nanotechnology-based choice for the practical realization of X-ray windows and bring the performance to a level that only nanotechnology can offer.

引用

页码：695 / 699

页数：5

共 50 条

[21] Research on bonding strength of ultra-thin glass in assembly of X-ray telescope
Shen Z.
Zhang J.
Yu J.
Wang X.
Wei J.
Long H.
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2019, 48 (02):
[22] Ultra-thin films of In on Pd(111) characterized by X-ray photoelectron diffraction
Pancotti, Alexandre
de Siervo, Abner
Carazzolle, Marcelo F.
Landers, Richard
Nascente, Pedro A. P.
THIN SOLID FILMS, 2019, 688
[23] Strain measurement in ultra-thin films using RHEED and X-ray techniques
Gilles, B
STRESS AND STRAIN IN EPITAXY: THEORETICAL CONCEPTS, MEASUREMENTS AND APPLICATIONS, 2001, : 173 - 200
[24] Investigation of the interfacial structure of ultra-thin platinum films using X-ray reflectivity and X-ray photoelectron spectroscopy
Solina, DM
Cheary, RW
Swift, PD
Dligatch, S
McCredie, GM
Gong, B
Lynch, P
THIN SOLID FILMS, 2000, 372 (1-2) : 94 - 103
[25] X-ray photoelectron spectroscopy and grazing incidence X-ray reflectivity study of silicon nitride thin films
Li, BQ
Fujimoto, T
Fukumoto, N
Honda, K
Kojima, I
THIN SOLID FILMS, 1998, 334 (1-2) : 140 - 144
[26] Ultra thin porous silicon films investigated by X-ray reflectometry
Ennejah, Nessima
Aouida, Selma
Bessais, Brahim
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 6, 2011, 8 (06): : 1931 - 1935
[27] Structure of ultra-thin silicon film on HOPG studied by polarization-dependence of X-ray absorption fine structure
Baba, Y.
Shimoyama, I.
Hirao, N.
Sekiguchi, T.
CHEMICAL PHYSICS LETTERS, 2014, 594 : 64 - 68
[28] Single pores on ultra-thin silicon nitride membranes for viral sensing
Davenport, Matthew
Healey, Ken
Letant, Sonia
Siwy, Zuzanna
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2011, 241
[29] Novel diffusion barrier with ultra-thin silicon nitride cap layer
Lu, JP
Hsu, MY
Hong, QZ
Dixit, GA
Cordasco, VT
Zielinski, EM
Luttmer, JD
Havemann, RH
Magel, LK
Tsai, HL
ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS, 1998, 514 : 507 - 512
[30] Fabrication and electrical properties of ultra-thin silicon nanowires
Rochdi, N.
Tonneau, D.
Jandard, F.
Dallaporta, H.
Safarov, V.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (05): : 1157 - 1161

← 1 2 3 4 5 →