RF noise in a short-channel n-MOSFET:: a Monte Carlo study

被引：0
|
作者：
Rengel, R [1 ]
Mateos, J [1 ]
Pardo, D [1 ]
González, T [1 ]
Martín, MJ [1 ]
机构：
[1] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain
来源：
ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001 | 2002年 / 384-3卷
关键词：
MOSFETs; RF anaiysis; Monte Carlo; simulation; semiconductor devices; noise;
D O I：
10.4028/www.scientific.net/MSF.384-385.155
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a complete Monte Carlo analysis of transport and RF noise in a short-gate n-MOSFET. Short-channel effects are observed in the static characteristics. Velocity overshoot of electrons in the channel, as well as the appearance of hot carriers are detected. P, R and C noise parameters show an important increase in their values with respect to the long-channel theory predictions due to the presence of hot electrons. NFmin is also calculated; results confirm the importance of induced gate noise on the behaviour of this parameter.
引用
收藏
页码：155 / 158
页数：4
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