SHORT-CHANNEL EFFECTS ON MOSFET SUBTHRESHOLD SWING

It is shown both experimentally and via MINIMOS simulation that the subthreshold swing S = partial derivative V-G/partial derivative log(10) I-D in a MOSFET may decrease significantly as gate length L(G) is reduced before finally increasing catastrophically when L(G) becomes so short that punchthrough current flows. The effect is largest in devices with lightly doped substrates, deep source/drain junctions, and heavy threshold adjust implants operated at high drain bias. An explanation for the effect is provided in terms of sharing of the depletion region charge between gate and drain.