Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

被引：17

作者：

Chiang, TK ^{[1
]}

Wang, YH ^{[1
]}

Houng, MP ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 01期

关键词：

D O I：

10.1016/S0038-1101(98)00240-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Short-channel effects on the subthreshold behavior are modeled for fully depicted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 mu m. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：123 / 129

页数：7

共 50 条

[1] Modified boundary condition at Si-SiO2 interface for modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's
Jit, S
Pandey, P
Kumar, A
Gupta, SK
SOLID-STATE ELECTRONICS, 2005, 49 (01) : 141 - 143
[2] Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si-SOI-MESFETs
Jit, S.
Pandey, Prashant Kumar
Tiwari, Pramod Kumar
SOLID-STATE ELECTRONICS, 2009, 53 (01) : 57 - 62
[3] THRESHOLD VOLTAGE MODELING AND THE SUBTHRESHOLD REGIME OF OPERATION OF SHORT-CHANNEL MOSFETS
FJELDLY, TA
SHUR, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 137 - 145
[4] SHORT-CHANNEL EFFECTS ON MOSFET SUBTHRESHOLD SWING
TARR, NG
WALKEY, DJ
ROWLANDSON, MB
HEWITT, SB
MACELWEE, TW
SOLID-STATE ELECTRONICS, 1995, 38 (03) : 697 - 701
[5] AN ANALYTICAL THRESHOLD VOLTAGE AND SUBTHRESHOLD CURRENT MODEL FOR SHORT-CHANNEL MESFETS
DE, VK
MEINDL, JD
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (02) : 169 - 172
[6] A NEW APPROACH TO THRESHOLD VOLTAGE MODELING OF SHORT-CHANNEL MOSFETS
SKOTNICKI, T
MARCINIAK, W
SOLID-STATE ELECTRONICS, 1986, 29 (11) : 1115 - 1127
[7] THRESHOLD VOLTAGE OF SHORT-CHANNEL IGFET
LEE, HS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : C100 - &
[8] AN ANALYTICAL THRESHOLD VOLTAGE AND SUBTHRESHOLD CURRENT MODEL FOR SHORT-CHANNEL ALGAAS/GAAS MODFETS
DE, VK
MEINDL, JD
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (02) : 180 - 183
[9] SIMPLE APPROACH FOR ACCURATELY MODELING THRESHOLD VOLTAGE OF SHORT-CHANNEL MOSTS
BANDY, WR
KOKALIS, DP
SOLID-STATE ELECTRONICS, 1977, 20 (08) : 675 - 680
[10] Modeling the short-channel threshold voltage of a novel vertical heterojunction pMOSFET
Collaert, N
De Meyer, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) : 933 - 939

← 1 2 3 4 5 →