Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

被引：5
|
作者：
Inoue, J [1 ]
Isu, T
Akahane, K
Yamamoto, N
Tsuchiya, M
机构：
[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukuikita, Koganei, Tokyo 1848795, Japan
[2] Japan Sci & Technol Agcy, Saitama, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期
关键词：
D O I：
10.1002/pssc.200564141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We examined the absorption saturation properties in the 1.5 mu m band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-mu m-band quantum dot saturable absorber with interference enhancement. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码：520 / +
页数：2
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