Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

被引：5

作者：

Inoue, J ^{[1
]}

Isu, T

Akahane, K

Yamamoto, N

Tsuchiya, M

机构：

[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukuikita, Koganei, Tokyo 1848795, Japan

[2] Japan Sci & Technol Agcy, Saitama, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期

关键词：

D O I：

10.1002/pssc.200564141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We examined the absorption saturation properties in the 1.5 mu m band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-mu m-band quantum dot saturable absorber with interference enhancement. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：520 / +

页数：2

共 49 条

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