Self-assembling ferroelectric Na0.5K0.5NbO3 thin films by pulsed-laser deposition

被引:0
|
作者
Cho, CR [1 ]
Grishin, A [1 ]
机构
[1] Royal Inst Technol, Dept Phys, S-10044 Stockholm, Sweden
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly [100]-axis oriented single-phase Na0.5K0.5NbO3 (NKN) thin films have been grown on polycrystalline Pt80Ir20 (Pt) and SiO2 (native oxide)/Si (111) substrates using KrF excimer laser ablation of a stoichiometric ceramic target. X-ray diffraction theta-2 theta scan and rocking curve data are evidence of the strong effect of film self-assembling along the [100] direction regardless of the substrate texture. Furthermore, multiple-cell structuring along the polar axis has been observed in NKN films grown onto the Pt substrate. Ferroelectric measurements yield remnant polarization P-r of 10 mu C/cm(2) and spontaneous polarization P-s of 17.5 mu C/cm(2) at 80 kV/cm. The electrical resistivity of the Na0.5K0.5NbO3 film was in the order of 10(10) Ohm cm at 10 kV/cm. Dielectric permittivity epsilon(') and dissipation factor tan delta have been found to vary 480-440 and 0.028-0.024, respectively, in the frequency range 0.4-100 kHz. (C) 1999 American Institute of Physics. [S0003-6951(99)03428-2].
引用
收藏
页码:268 / 270
页数:3
相关论文
共 50 条
  • [31] Raman Spectra Study of K0.5Na0.5NbO3 Ferroelectric Thin Films
    Ahn, Chang Won
    Hwang, Hak-In
    Lee, Kwang Sei
    Jin, Byung Moon
    Park, Sungmin
    Park, Gwangseo
    Yoon, Doohee
    Cheong, Hyeonsik
    Lee, Hai Joon
    Kim, Ill Won
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (09)
  • [32] Uniaxial stress dependence of the dielectric and ferroelectric properties of the Na0.5K0.5NbO3 and Na0.5K0.5NbO3+0.5mol%MnO2 ceramics
    Suchanicz, Jan
    Faszczowy, Ireneusz
    Sternberg, Andris
    PHASE TRANSITIONS, 2013, 86 (2-3) : 251 - 259
  • [33] The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films
    Ahn, C. W.
    Lee, S. Y.
    Lee, H. J.
    Ullah, A.
    Bae, J. S.
    Jeong, E. D.
    Choi, J. S.
    Park, B. H.
    Kim, I. W.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (21)
  • [34] Ferroelectric Na0.5K0.5NbO3/SiO2/Si thin film structures for nonvolatile memory
    Cho, CR
    Grishin, AM
    MATERIALS SCIENCE OF NOVEL OXIDE-BASED ELECTRONICS, 2000, 623 : 155 - 160
  • [35] Li diffusion and surface segregation in K0.5Na0.5NbO3 films grown by Pulsed Laser Deposition
    Groppi, C.
    Vangelista, S.
    Ravizza, E.
    Spadoni, S.
    Maspero, F.
    Asa, M.
    Ferrarini, P.
    Castoldi, L.
    Bertacco, R.
    THIN SOLID FILMS, 2022, 763
  • [36] Optical waveguiding in magnetron-sputtered Na0.5K0.5NbO3 thin films on sapphire substrates
    Blomqvist, M
    Khartsev, S
    Grishin, A
    Petraru, A
    Buchal, C
    APPLIED PHYSICS LETTERS, 2003, 82 (03) : 439 - 441
  • [37] Effect of Li- and Ta-doping on the ferroelectric properties of Na0.5K0.5NbO3 thin films prepared by a chelate route
    Fernandez Solarte, A.
    Pellegri, N.
    de Sanctis, O.
    Stachiotti, M. G.
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2013, 66 (03) : 488 - 496
  • [38] K0.5Na0.5NbO3 Thin Films Prepared by Chemical Solution Deposition
    Cakare-Samardzija, L.
    Malic, B.
    Kosec, M.
    FERROELECTRICS, 2008, 370 : 113 - 118
  • [39] Effect of Li- and Ta-doping on the ferroelectric properties of Na0.5K0.5NbO3 thin films prepared by a chelate route
    A. Fernández Solarte
    N. Pellegri
    O. de Sanctis
    M. G. Stachiotti
    Journal of Sol-Gel Science and Technology, 2013, 66 : 488 - 496
  • [40] Structural evolution of Na0.5K0.5NbO3 at high temperatures
    Ishizawa, Nobuo
    Wang, Jun
    Sakakura, Terutoshi
    Inagaki, Yumi
    Kakimoto, Ken-ichi
    JOURNAL OF SOLID STATE CHEMISTRY, 2010, 183 (11) : 2731 - 2738