Slot defect in three-dimensional photonic crystals

被引：2
|
作者：
Sigalas, M. M. [1 ]
Biswas, R. [2 ,3 ]
机构：
[1] NCSR Demokritos, Inst Mat Sci, Athens 15310, Greece
[2] Iowa State Univ, Ames Lab, Dept Phys & Astron, Microelect Res Ctr, Ames, IA 50011 USA
[3] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA
来源：
PHYSICAL REVIEW B | 2008年 / 78卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.78.033101
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have designed and simulated with the finite difference time domain method, an all-dielectric slot defect within a three-dimensional photonic band-gap crystal that produces a sharp defect state within the band gap showing a quality of factor exceeding 600 and field enhancement exceeding 25. At the slot defect the field at the resonance is localized in a volume smaller than 0.15(lambda)(3), far smaller than that achieved with previous defect modes in three-dimensional crystals.
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页数：3
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