Slot defect in three-dimensional photonic crystals

被引：2

作者：

Sigalas, M. M. ^{[1
]}

Biswas, R. ^{[2
,3
]}

机构：

[1] NCSR Demokritos, Inst Mat Sci, Athens 15310, Greece

[2] Iowa State Univ, Ames Lab, Dept Phys & Astron, Microelect Res Ctr, Ames, IA 50011 USA

[3] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.78.033101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have designed and simulated with the finite difference time domain method, an all-dielectric slot defect within a three-dimensional photonic band-gap crystal that produces a sharp defect state within the band gap showing a quality of factor exceeding 600 and field enhancement exceeding 25. At the slot defect the field at the resonance is localized in a volume smaller than 0.15(lambda)(3), far smaller than that achieved with previous defect modes in three-dimensional crystals.

引用

页数：3

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