Ion beam synthesis of buried CoSi2-structures

被引：6

作者：

Vogel, T ^{[1
]}

Meijer, J ^{[1
]}

Stephan, A ^{[1
]}

Weidenmüller, U ^{[1
]}

Dagkaldiran, Ü ^{[1
]}

Kubsky, S ^{[1
]}

Baving, P ^{[1
]}

Becker, HW ^{[1
]}

Röcken, H ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Inst Phys Ionenstrahlen, D-44780 Bochum, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 188卷

关键词：

ion beam synthesis; ion implantation; silicide formation; ion projection;

D O I：

10.1016/S0168-583X(01)01070-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion beam synthesis of buried CoSi2, microstructures was performed by high energy ion projection (HEIP) implantation of cobalt into silicon. Ion beam synthesis (mesotaxy) means stoichiometrically high-fluence ion implantation into a heated sample and subsequent annealing of the specimen. The use of the ion projection technique permits an in situ contact mask-free structuring with a sub-micron lateral resolution. The HEIP set-up consists of a superconducting solenoid lens. which projects the structures of a stencil mask onto the target and is driven by a 4 MV tandem accelerator, Because of the high demagnification of the structures the ion current density at the target is increased by two orders of magnitude for small structures. The analysis of the produced structures by optical and electron microscopy. Rutherford backscattering spectroscopy and electrical characterisation shows the good applicability of the Bochum HEIP for IBS. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：174 / 178

页数：5

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