Ion beam synthesis of buried FeSi2 in (100) silicon

被引：0
|
作者：
Panknin, D. [1 ]
Wieser, E. [1 ]
Groetzchel, R. [1 ]
Skorupa, W. [1 ]
Baither, D. [1 ]
Bartsch, H. [1 ]
Querner, G. [1 ]
Danzig, A. [1 ]
机构：
[1] Zentralinstitut fur Kernforschung, Rossendorf, Dresden, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1992年 / B12卷 / 1-2期
关键词：
Semiconducting Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：119 / 122
相关论文
共 50 条
  • [1] ION-BEAM SYNTHESIS OF BURIED FESI2 IN (100) SILICON
    PANKNIN, D
    WIESER, E
    GROETZSCHEL, R
    SKORUPA, W
    BAITHER, D
    BARTSCH, H
    QUERNER, G
    DANZIG, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 119 - 122
  • [2] ION-BEAM SYNTHESIS OF BURIED EPITAXIAL FESI2
    RADERMACHER, K
    MANTL, S
    APETZ, R
    DIEKER, C
    LUTH, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 115 - 118
  • [3] Ion beam synthesis of β-FeSi2
    Daraktchieva, V
    Baleva, M
    Goranova, E
    Angelov, C
    VACUUM, 2000, 58 (2-3) : 415 - 419
  • [4] TEM INVESTIGATION OF ION-BEAM SYNTHESIZED BURIED FESI2 IN (001) SILICON
    TAVARES, J
    BENDER, H
    LAUWERS, A
    MAEX, K
    VANROSSUM, M
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 181 - 184
  • [5] Microstructure of β-FeSi2 buried layers synthesis by ion implantation
    Ayache, R
    Richter, E
    Bouabellou, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 : 137 - 142
  • [6] ION-BEAM SYNTHESIS OF CUBIC FESI2
    DESIMONI, J
    BERNAS, H
    BEHAR, M
    LIN, XW
    WASHBURN, J
    LILIENTALWEBER, Z
    APPLIED PHYSICS LETTERS, 1993, 62 (03) : 306 - 308
  • [7] Synthesis of amorphous FeSi2 by ion beam mixing
    Milosavljevic, M
    Shao, G
    Bibic, N
    McKinty, CN
    Jeynes, C
    Homewood, KP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 188 : 166 - 169
  • [8] Pulsed ion-beam synthesis of β-FeSi2 precipitate layers in Si(100)
    Batalov, RI
    Bayazitov, RM
    Khaibullin, IB
    Terukov, EI
    Kudoyarova, VK
    NANOTECHNOLOGY, 2001, 12 (04) : 409 - 412
  • [9] Ion beam synthesis of β-FeSi2 as an IR photosensitive material
    Maeda, Y
    Akita, T
    Umezawa, K
    Miyake, K
    Sagawa, M
    OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 354 - 360
  • [10] Determination of silicon vacancy in ion-beam synthesized β-FeSi2
    Maeda, Y.
    Ichikawa, T.
    Jonishi, T.
    Narumi, M.
    ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010), 2011, 11 : 83 - 86
12345