Ion beam synthesis of buried FeSi2 in (100) silicon

被引：0
|
作者：
Panknin, D. [1 ]
Wieser, E. [1 ]
Groetzchel, R. [1 ]
Skorupa, W. [1 ]
Baither, D. [1 ]
Bartsch, H. [1 ]
Querner, G. [1 ]
Danzig, A. [1 ]
机构：
[1] Zentralinstitut fur Kernforschung, Rossendorf, Dresden, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1992年 / B12卷 / 1-2期
关键词：
Semiconducting Silicon;
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摘要：
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页码：119 / 122
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