Temperature-dependent carbon incorporation into the Si1-yCy film during gas-source molecular beam epitaxy using monomethylsilane

被引：5
|
作者：
Konno, A
Senthil, K
Murata, T
Suemitsu, M
机构：
[1] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
[2] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 10期
关键词：
SiC; monomethylsine; TPD; MIR-FT-IR; surface hydrogen; carbon incorporation;
D O I：
10.1016/j.apsusc.2005.05.052
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Coverage and adsorption state of hydrogen atoms on the growing surface of Si1-yCy film using monomethylsilane has been investigated by using temperature-programmed desorption (TPD) and multiple-internal-reflection Fourier-transform infrared spectroscopy (MIR-FT-IR). The surface hydrogen coverage decreases with the growth temperature T-g until it disappears at 800 degrees C. All the H-2-TPD spectra are well resolved into six SiH-related and one CHn-related hydrogen desorption peaks. The SiH-related FT-IR peak showed a blue shift with increasing T-g, which, in conjunction with the TPD, is related to enhanced C incorporation at backbonds of SiH. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：3692 / 3696
页数：5
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