Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 7卷 / 3378期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] HYDROGEN INCORPORATION INTO SI-DOPED INP DEPOSITED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    SIDHU, LS
    ZUKOTYNSKI, S
    KRUZELECKY, RV
    THOMPSON, DA
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3378 - 3381
  • [2] Phonon characteristics of Si-doped InAs grown by gas-source molecular beam epitaxy
    Talwar, Devki N.
    Lin, Hao-Hsiung
    Feng, Zhe Chuan
    JOURNAL OF RAMAN SPECTROSCOPY, 2019, 50 (11) : 1731 - 1743
  • [3] Growth of TlInGaAs on InP by gas-source molecular beam epitaxy
    Takenaka, Keiichi
    Asahi, Hajime
    Koh, Hideki
    Asami, Kumiko
    Gonda, Shun-Ichi
    Oe, Kunishige
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1026 - 1028
  • [4] Growth of TlInGaAs on InP by gas-source molecular beam epitaxy
    Takenaka, K
    Asahi, H
    Koh, H
    Asami, K
    Gonda, S
    Oe, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1026 - 1028
  • [5] Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy
    Shimomura, H
    Anan, T
    Sugou, S
    JOURNAL OF CRYSTAL GROWTH, 1996, 162 (3-4) : 121 - 125
  • [6] GROWTH OF INP, INGAAS, AND INGAASP ON INP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    ASONEN, H
    RAKENNUS, K
    TAPPURA, K
    HOVINEN, M
    PESSA, M
    JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 101 - 105
  • [7] Effect of noble gas plasmas on the growth of InP by gas-source molecular beam epitaxy
    Thompson, DA
    Mitchell, DB
    Robinson, BJ
    LaPierre, RR
    Mascher, P
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 769 - 772
  • [8] Growth studies of GaP on Si by gas-source molecular beam epitaxy
    Bi, WG
    Mei, XB
    Tu, CW
    JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) : 256 - 262
  • [9] SI AND GE GAS-SOURCE MOLECULAR-BEAM EPITAXY (GSMBE)
    SUEMITSU, M
    HIROSE, F
    MIYAMOTO, N
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 1015 - 1020
  • [10] Temperature-modulated Si(001):As gas-source molecular beam epitaxy:: Growth kinetics and As incorporation
    Kim, H
    Glass, G
    Soares, JANT
    Foo, YL
    Desjardins, P
    Greene, JE
    APPLIED PHYSICS LETTERS, 2001, 79 (20) : 3263 - 3265
12345