Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy

We have studied the growth conditions of AlPSb and GaPSb lattice match to InP substrates using gas-source molecular beam epitaxy, Mirror-like surface morphology was obtained under the lattice matching growth conditions. It was found that the solid compositions of AlPSb and GaPSb were sensitive to the relative flux ratio of the two group V elements (P,Sb) and to the growth temperature, respectively. The electrical properties of Be-doped and Si-doped GaPSb were characterized by Hall measurements at room temperature. In Si-doped GaPSb, electron concentration seems to saturate at 5 X 10(17) cm(-3). For optical properties, the ellipsometically measured refractive indices at 1.55 mu m were 3.037 for AlPSb and 3.579 for GaPSb showed larger refractive index difference than the InGaAsP (E(g) = 1.45 mu m)/InP system. 20 pairs of AlPSb/GaPSb DBR reflectivity measurements demonstrate a stop-band width of 206 nm with the maximum reflectivity exceeding 99%. This result will promise to be useful for long-wavelength surface emitting lasers.