Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 7卷 / 3378期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Growth of Si/SiGe/Si heterojunction bipolar transistors by gas-source molecular beam epitaxy
    Liu, Xuefeng
    Li, Jinmin
    Kong, Meiying
    Huang, Dading
    Li, Jianping
    Lin, Lanying
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (02): : 142 - 145
  • [22] Gas-source molecular beam epitaxy and characterization of InGaAs/InGaAsP quantum well structures on InP
    Bi, WG
    Tu, CW
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (07) : 1049 - 1053
  • [23] HOMOEPITAXIAL GROWTH OF INP ON (111)B SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    HOU, HQ
    TU, CW
    APPLIED PHYSICS LETTERS, 1993, 62 (03) : 281 - 283
  • [24] Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy
    Imperial Coll, London, United Kingdom
    J Cryst Growth, 1-4 (214-222):
  • [25] Growth optimization of GaAsSb lattice matched to InP by gas-source molecular-beam epitaxy
    Wu, BR
    Xu, CF
    Chang, KL
    Hsieh, KC
    Cheng, KY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (04): : 1641 - 1644
  • [26] OPTIMIZATION OF INTERFACES IN INGAAS/INP HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    MOZUME, T
    KASHIMA, H
    HOSOMI, K
    OUCHI, K
    SATO, H
    MASUDA, H
    TANOUE, T
    OHBU, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 276 - 280
  • [27] Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy
    Joyce, BA
    Fernandez, JM
    Xie, MH
    Matsumura, A
    Zhang, J
    Taylor, AG
    JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) : 214 - 222
  • [28] Prediction of concentration profile for P doping in Si gas-source molecular beam epitaxy
    Hirose, F
    Sakamoto, H
    JOURNAL OF CRYSTAL GROWTH, 1999, 196 (01) : 115 - 121
  • [29] In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)
    Goldfarb, I
    Owen, JHG
    Bowler, DR
    Goringe, CM
    Hayden, PT
    Miki, K
    Pettifor, DG
    Briggs, GAD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1938 - 1943
  • [30] Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy
    Zhang, DH
    Wang, XZ
    Zheng, HQ
    Yoon, SF
    Kam, CH
    ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 14 - 19
12345