Hole Velocity Enhancement in Sub-100 nm Gate Length Strained-SiGe Channel p-MOSFETs on Insulator

被引：0
|
作者：
Gomez, L. [1 ]
Hashemi, P. [1 ]
Hoyt, J. L. [1 ]
机构：
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
来源：
2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2008年
关键词：
D O I：
10.1109/SOI.2008.4656345
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：163 / 164
页数：2
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