Engineering ReRAM for high-density applications

被引：29

作者：

Calderoni, Alessandro ^{[1
]}

Sills, Scott ^{[1
]}

Cardon, Chris ^{[1
]}

Faraoni, Emiliano ^{[1
]}

Ramaswamy, Nirmal ^{[1
]}

机构：

[1] Micron Technol Inc, Boise, ID 83706 USA

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 147卷

关键词：

Resistive memory; Endurance; Noise; Variability; MLC; Cross-point;

D O I：

10.1016/j.mee.2015.04.044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resistive random access memory (ReRAM) devices are emerging candidates for the next generation of nonvolatile high-density memory (Sills et al., 2014). The value proposition for this technology is bit alterability, high speed operation, long retention and high endurance. In addition, low-power and low-current operation is highly desirable for high-density memory systems targeting the growing mobile market. This paper presents various challenges in engineering a ReRAM cell suitable for high-density applications such as material selection, programming algorithms, noise issues and scaling path. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：145 / 150

页数：6

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