Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

被引：9
|
作者：
Yu, Sheng-Fu [1 ]
Chang, Sheng-Po [1 ]
Chang, Shoou-Jinn [1 ]
Lin, Ray-Ming [2 ]
Wu, Hsin-Hung [2 ]
Hsu, Wen-Ching [3 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Inst Microelect,Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Green Technol Res Ctr, Tao Yuan 333, Taiwan
[3] Sino Amer Silicon Prod Inc, Hsinchu 300, Taiwan
来源：
JOURNAL OF NANOMATERIALS | 2012年 / 2012卷
关键词：
EFFICIENCY; SURFACE; IMPROVEMENT; EXTRACTION; NITRIDE; OUTPUT; POWER; LEDS;
D O I：
10.1155/2012/346915
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%) mu m at an injected current of 20 mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.
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页数：6
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