Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights

被引：9

作者：

Yu, Sheng-Fu ^{[1
]}

Chang, Sheng-Po ^{[1
]}

Chang, Shoou-Jinn ^{[1
]}

Lin, Ray-Ming ^{[2
]}

Wu, Hsin-Hung ^{[2
]}

Hsu, Wen-Ching ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Inst Microelect,Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Chang Gung Univ, Dept Elect Engn, Green Technol Res Ctr, Tao Yuan 333, Taiwan

[3] Sino Amer Silicon Prod Inc, Hsinchu 300, Taiwan

来源：

JOURNAL OF NANOMATERIALS | 2012年 / 2012卷

关键词：

EFFICIENCY; SURFACE; IMPROVEMENT; EXTRACTION; NITRIDE; OUTPUT; POWER; LEDS;

D O I：

10.1155/2012/346915

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%) mu m at an injected current of 20 mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

引用

页数：6

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