Noncontact carrier lifetime depth profiling of ion-implanted Si using photothermal radiometry

被引：0
|
作者：
Othonos, A [1 ]
Salnick, A [1 ]
Mandelis, A [1 ]
Christofides, C [1 ]
机构：
[1] UNIV CYPRUS, DEPT NAT SCI, NICOSIA, CYPRUS
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1997年 / 161卷 / 02期
关键词：
D O I：
10.1002/1521-396X(199706)161:2<R13::AID-PSSA999913>3.0.CO;2-H
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：R13 / R14
页数：2
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