Random Telegraph Noise Induced Drain-Current Fluctuation during Dynamic Gate Bias in Si MOSFETs

The influence of random telegraph noise (RTN) in MOSFETs on drain current (I-d) during transition edge of pulse gate voltage (V-g) was investigated. The I-d fluctuation under dynamic V-g was larger than that under dc bias by a factor of 2.2. We have revealed that the initial trap occupation states before varying V-g significantly affect the I-d values during the transition edge of dynamic V-g. The trap occupation states were governed by the initial time and the profiles of RTN, e.g., the distribution of time constant (tau(c) and tau(e)). The I-d fluctuation under dynamic V-g can be controlled according to the profiles of RTN. These results provide useful information for designing an ultra-high speed circuit.