Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

被引：45

作者：

Lan, Yann-Wen ^{[1
,2
]}

Torres, Carlos M. ^{[2
,6
]}

Tsai, Shin-Hung ^{[2
]}

Zhu, Xiaodan ^{[2
]}

Shi, Yumeng ^{[3
]}

Li, Ming-Yang ^{[3
,4
]}

Li, Lain-Jong ^{[3
]}

Yeh, Wen-Kuan ^{[1
,5
]}

Wang, Kang L. ^{[2
]}

机构：

[1] Natl Appl Res Labs, Natl Nano Device Labs NDL, Hsinchu 30078, Taiwan

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[3] King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia

[4] Acad Sinica, Res Ctr Appl Sci, Taipei 10617, Taiwan

[5] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan

[6] Space & Naval Warfare SPAWAR Syst Ctr Pacific, San Diego, CA 92152 USA

来源：

SMALL | 2016年 / 12卷 / 41期

基金：

美国国家科学基金会;

关键词：

GROWTH; GRAPHENE; ELECTRONICS; JUNCTIONS;

D O I：

10.1002/smll.201601310

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

[No abstract available]

引用

页码：5676 / 5683

页数：8

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