Impact of Quantum Confinement on Band-to-Band Tunneling of Line-Tunneling Type L-Shaped Tunnel Field-Effect Transistor

被引：26
|
作者：
Najam, Faraz [1 ]
Yu, Yun Seop [1 ]
机构：
[1] Hankyong Natl Univ, Inst Informat Telecommun Convergence, Dept Elect Elect & Control Engn, Anseong 456749, South Korea
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 04期
关键词：
Band-to-band tunneling (BTBT); L-shaped tunnel field-effect transistor (LTFET); ON-current; quantum confinement; SIMULATION; BEHAVIOR;
D O I：
10.1109/TED.2019.2898403
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An L-shaped tunnel field-effect transistor (LTFET) employs an overlapped gate/channel/source architecture to maximize band-to-band tunneling (BTBT) area. The overlapped channel is very thin and suffers from the geometrical quantum confinement effect (QCE). The analysis of QCE in LTFET has been shown to significantly affect the BTBT in LTFET. As a consequence of QCE, conduction band in the overlapped channel becomes a discrete set of energy subbands, whereas the valence band in the source is continuous. The discretization of conduction band reduces the BTBT drain-source current (I-ds) of LTFET. QCE also forces the lateral and parasitic component of BTBT to dominate for a significant portion of the gate-bias swing.
引用
收藏
页码：2010 / 2016
页数：7
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