Silicon-based field-induced band-to-band tunneling effect transistor

被引：10

作者：

Kim, KR ^{[1
]}

Kim, DH ^{[1
]}

Song, KW ^{[1
]}

Baek, G ^{[1
]}

Kim, HH ^{[1
]}

Huh, JI ^{[1
]}

Lee, JD ^{[1
]}

Park, BG ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, ISRC, Seoul 151744, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 06期

关键词：

band-to-band tunneling; degenerate; FIBTET; negative differential transconductance; SOI MOSFET;

D O I：

10.1109/LED.2004.829668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports a silicon-based field-induced hand-to-hand tunneling effect transistor (FIBTET), which has a structure totally compatible with silicon-on-insulator (SOI) MOSFET. The field-induced hand-to-hand tunneling effect between degenerate channel and source/drain is used as the key principle of the device operation. FIBTETs demonstrate the controllable negative differential transconductance characteristics at room temperature both for n-FIBTETs and p-FIBTETs. The size dependence of the device characteristics shows that the peak tunneling current can be controlled by the layout design of channel length and width.

引用

页码：439 / 441

页数：3

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