Design and Analysis of an Efficient High Holding Voltage SCR for ESD Protection

被引：0
|
作者：
Zhou, Zijie [1 ]
Jin, Xiangliang [1 ]
机构：
[1] Hunan Engn Lab Microelect Optoelect & Syst Chip, Xiangtan, Peoples R China
来源：
2017 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS) | 2017年
基金：
中国国家自然科学基金;
关键词：
ESD; SCR; 3D simulation; Holding Voltage; CIRCUITS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon-Controlled Rectifier (SCR) is well known for its good robustness, but its deep Snapback makes it have a low holding voltage, it will bring a latch-up issue. An improving silicon-controlled rectifier (DSCR) device with higher holding voltage and smaller area is proposed and fabricated in a 0.5 pm HV CDMOS process. The 3D simulation results show that the DSCR has same working mechanism with SCR, and enlarging the D1 and D2 is effective to increase DSCR's holding voltage. TLP test results show that enlarging D1 and D2 to 8 pm makes the DSCR's holding voltage from 2.4 V to 7.95 V without increasing layout area.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Design of Dual-Direction SCR With High Holding Voltage for High Voltage ESD Protection
    Liu, Yujie
    Jin, Xiangliang
    2022 INTERNATIONAL EOS/ESD SYMPOSIUM ON DESIGN AND SYSTEM (IEDS), 2022,
  • [2] The design of high holding voltage SCR for whole-chip ESD protection
    Koo, Yong-Seo
    Lee, Kwang-Yeob
    Kim, Kui-Dong
    Kwon, Jong-Ki
    IEICE ELECTRONICS EXPRESS, 2008, 5 (17): : 624 - 630
  • [3] Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device
    Zeng, Jie
    Dong, Shurong
    Liou, Juin J.
    Han, Yan
    Zhong, Lei
    Wang, Weihuai
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (02) : 606 - 614
  • [4] A New dual directional SCR with high holding voltage for High Voltage ESD protection
    Song, Shiyu
    Du, Feibo
    Hou, Fei
    Song, Wenqiang
    Liu, Zhiwei
    Liu, Jizhi
    2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
  • [5] A Holding Voltage Adjustment Technique of SCR for ESD Protection
    Huang Xiaozong
    Liu Fan
    Liu Zhiwei
    3RD INTERNATIONAL CONFERENCE ON INTELLIGENT ENERGY AND POWER SYSTEMS (IEPS 2017), 2017, : 72 - 75
  • [6] Design of a cascade-MOS-triggered SCR with high holding-voltage for high- voltage ESD protection
    Zhu, Ling
    Liang, Hailian
    Gu, Xiaofeng
    Zhang, Xiaoxin
    Yan, Dawei
    SOLID-STATE ELECTRONICS, 2020, 171
  • [7] The Novel SCR-Based ESD Protection Device with High Holding Voltage
    Won, Jong-Il
    Shin, Samuell
    Ha, Ka-San
    Kwon, Jong-Ki
    Koo, Yong-Seo
    ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5, 2009, : 1779 - +
  • [8] An improved GGNMOS triggered SCR for high holding voltage ESD protection applications
    张帅
    董树荣
    吴晓京
    曾杰
    钟雷
    吴健
    Chinese Physics B, 2015, 24 (10) : 595 - 597
  • [9] An improved GGNMOS triggered SCR for high holding voltage ESD protection applications
    Zhang Shuai
    Dong Shu-Rong
    Wu Xiao-Jing
    Zeng Jie
    Zhong Lei
    Wu Jian
    CHINESE PHYSICS B, 2015, 24 (10)
  • [10] Investigation on LDMOS-SCR with high holding current for high voltage ESD protection
    Liang, Hailian
    Si, Xiuwen
    Gu, Xiaofeng
    Cao, Huafeng
    Zhang, Yun
    MICROELECTRONICS RELIABILITY, 2016, 61 : 120 - 124
12345