Highly Unidirectional Y-Junction-Coupled S-Section InAs/InGaAs/GaAs Quantum-Dot Ring Lasers

被引：0
|
作者：
Qassim, Omar K. [1 ]
Li, Chia-Yeh [1 ]
Withers, Nathan J. [1 ]
Smolyakov, Gennady A. [1 ]
Osinski, Marek [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2008年
关键词：
D O I：
10.1109/ISLC.2008.4636041
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers with low threshold current density and high unidirectionality is reported. The new design suppresses unwanted counterpropagating modes more effectively than in the previous S-section-racetrack devices.
引用
收藏
页码：125 / 126
页数：2
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