Stable Organic Field Effect Transistors with Low-Cost MoO3/Al Source-Drain Electrodes

被引：3
|
作者：
Zhang Hui [1 ,2 ,3 ,4 ]
Mi Bao-Xiu [1 ,2 ,3 ,4 ]
Li Xin [1 ,2 ,3 ,4 ]
Gao Zhi-Qiang [1 ,2 ]
Zhao Lu [1 ,2 ,3 ,4 ]
Huang Wei [3 ,4 ]
机构：
[1] Nanjing Univ Posts & Telecommun, Jiangsu Engn Ctr Flat Panel Displays & Solid Stat, Nanjing 210046, Jiangsu, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Mat Sci & Engn, Nanjing 210046, Jiangsu, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Key Lab Organ Elect & Informat Displays, Nanjing 210046, Jiangsu, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Inst Adv Mat, Nanjing 210046, Jiangsu, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 02期
基金：
中国国家自然科学基金;
关键词：
MOBILITY; POLYMER;
D O I：
10.1088/0256-307X/30/2/028501
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Stable organic field effect transistors (OFETs) based on copper phthalocyanine (CuPc) are reported using MoO3/Al as source-drain top contacts. By annealing the fabricated device at 130 degrees C in air, the mobility and the stability of the OFETs can be significantly improved in comparison with the untreated device. The heat-treated devices without encapsulation show a device storage stability of nearly 400 h while the untreated one only 183 h. This improvement is suggested to be mainly attributed to the reduction of the contact barrier between CuPc and the electrode, as well as the better alignment of CuPc molecules via post annealing.
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收藏
页数：4
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