Transparent organic thin film transistors with WO3/Ag/WO3 source-drain electrodes fabricated by thermal evaporation

被引：35
|
作者：
Zhang, Nan [1 ,2 ]
Hu, Yongsheng [1 ,2 ]
Liu, Xingyuan [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 130039, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期
基金：
美国国家科学基金会;
关键词：
LIGHT-EMITTING-DIODES; GATE; DEPOSITION; CHANNEL; SI;
D O I：
10.1063/1.4813838
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-performance transparent organic thin film transistors using a WO3/Ag/WO3 (WAW) multilayer as the source and drain electrodes have been developed without breaking the vacuum. The WAW electrodes were deposited by thermal evaporation at room temperature, leading to little damage to organic film. The optimized WAW electrode shows high transmittance (86.57%), low sheet resistance (11 Omega/sq), and a high work function (5.0 eV). Consequently, we obtained high performance devices with mobility of 8.44 x 10(-2) cm(2)/V.s, an on/off ratio of approximately 1.2 x 10(6), and an average visible range transmittance of 81.5%. (C) 2013 AIP Publishing LLC.
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页数：5
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