Improved performance of Top Contact Organic Thin film Transistors With bilayer WO3/Au Electrodes

被引:0
|
作者
Alam, Mir Waqas [1 ]
Wang, Zhaokui [1 ]
Naka, Shigeki [1 ]
Okada, Hiroyuki [1 ]
机构
[1] Toyama Univ, Grad Sch Sci & Engn, Toyama 9308555, Japan
关键词
FIELD-EFFECT TRANSISTORS; FABRICATION; DEVICES; LAYER;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have fabricated a top contact pentacene-based organic thin-film transistors (OTFTs) with bi-layer WO3/Au electrodes. We have obtained that the performance and the field-effect mobility of the devices with bilayer WO3/Au electrode was highly improved by comparing with pentacene based transistor without WO3 layer. The field-effect mobility was increased from 0.47 cm(2)/Vs to 0.69 cm(2)/Vs in the device with bilayer WO3/Au electrodes. From temperature dependence characteristics and surface morphology of pentacene, the improved device performance was due to the reduction in barrier height and surface roughness after inserting a suitable transitions metal oxide layer between the pentacene and the gold electrodes.
引用
收藏
页码:187 / 190
页数:4
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