Electrochemical capacitance-voltage measurements and modeling of GaAs nanostructures with delta-doped layers

被引：2
|
作者：
Shestakova, L. [1 ]
Yakovlev, G. [1 ]
Zubkov, V. [1 ]
机构：
[1] St Petersburg State Electrotech Univ LETI, Dept Micro & Nanoelect, Prof Popov Str 5, St Petersburg 197376, Russia
来源：
18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2017年 / 816卷
关键词：
HETEROSTRUCTURES;
D O I：
10.1088/1742-6596/816/1/012022
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents the results of electrochemical capacitance-voltage profiling and simulation of quantum-sized semiconductor structures with quantum wells and delta-doped layers based on gallium arsenide. The experimental ECV data were obtained by superposition of measured capacitance-voltage characteristics during the gradual etching of the nanostructure. As a result of simulation, the concentration distribution and energy lineups for structures with delta-layers and quantum wells in gallium arsenide were calculated. The results of simulation are in qualitative agreement with the experimental results and data found in literature.
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页数：4
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