Electrochemical capacitance-voltage measurements and modeling of GaAs nanostructures with delta-doped layers

The paper presents the results of electrochemical capacitance-voltage profiling and simulation of quantum-sized semiconductor structures with quantum wells and delta-doped layers based on gallium arsenide. The experimental ECV data were obtained by superposition of measured capacitance-voltage characteristics during the gradual etching of the nanostructure. As a result of simulation, the concentration distribution and energy lineups for structures with delta-layers and quantum wells in gallium arsenide were calculated. The results of simulation are in qualitative agreement with the experimental results and data found in literature.