Investigation of delta-doped pHEMT InGaAs/GaAs/AlGaAs structures by the electrochemical capacitance-voltage technique

被引：0
|
作者：
Yakovlev, G. [1 ]
Frolov, D. [1 ]
Zubkov, V. [1 ]
机构：
[1] Department of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University LETI, Prof. Popov str. 5, St. Petersburg,197376, Russia
来源：
Journal of Physics: Conference Series | 2016年 / 690卷 / 01期
关键词：
701.1 Electricity: Basic Concepts and Phenomena - 712.1.1 Single Element Semiconducting Materials - 712.1.2 Compound Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 741.3 Optical Devices and Systems;
D O I：
17th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2015
中图分类号：
学科分类号：
摘要：
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