Formation of Graphene Nanofin Networks on Graphene/SiC(0001) by Molecular Beam Epitaxy

被引：1
|
作者：
Maeda, Fumihiko [1 ]
Hibino, Hiroki [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 06期
基金：
日本学术振兴会;
关键词：
CHEMICAL-VAPOR-DEPOSITION; CARBON NANOWALLS; FILMS; GRAPHITE; SURFACE; SEGREGATION; GROWTH; NICKEL;
D O I：
10.1143/JJAP.51.06FD16
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A graphene nanofin consists of few-layer graphene and sticks out from the surface like a fin. To understand what graphene nanofin is and gain insight into its formation mechanism, we grew graphene at various substrate temperatures by gas-source molecular beam epitaxy (MBE) on previously prepared epitaxial graphene formed on a SiC(0001). Then, the surfaces were observed using atomic force microscopy, transmission electron microscopy, and low-energy electron microscopy (LEEM). We found the graphene nanofin formation at the growth temperature from 600 to 915 degrees C. The LEEM and low-energy electron diffraction observations reveal that the crystal axes of the graphene layer are completely random, although their (0001) axes are aligned. This experimentally supports a formation mechanism where the nanofins are formed by the collision between incommensurate domains of graphene at their boundaries. (C) 2012 The Japan Society of Applied Physics
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页数：7
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