Formation of Graphene Nanofin Networks on Graphene/SiC(0001) by Molecular Beam Epitaxy

被引:1
|
作者
Maeda, Fumihiko [1 ]
Hibino, Hiroki [1 ]
机构
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
基金
日本学术振兴会;
关键词
CHEMICAL-VAPOR-DEPOSITION; CARBON NANOWALLS; FILMS; GRAPHITE; SURFACE; SEGREGATION; GROWTH; NICKEL;
D O I
10.1143/JJAP.51.06FD16
中图分类号
O59 [应用物理学];
学科分类号
摘要
A graphene nanofin consists of few-layer graphene and sticks out from the surface like a fin. To understand what graphene nanofin is and gain insight into its formation mechanism, we grew graphene at various substrate temperatures by gas-source molecular beam epitaxy (MBE) on previously prepared epitaxial graphene formed on a SiC(0001). Then, the surfaces were observed using atomic force microscopy, transmission electron microscopy, and low-energy electron microscopy (LEEM). We found the graphene nanofin formation at the growth temperature from 600 to 915 degrees C. The LEEM and low-energy electron diffraction observations reveal that the crystal axes of the graphene layer are completely random, although their (0001) axes are aligned. This experimentally supports a formation mechanism where the nanofins are formed by the collision between incommensurate domains of graphene at their boundaries. (C) 2012 The Japan Society of Applied Physics
引用
收藏
页数:7
相关论文
共 50 条
  • [21] Adsorption on epitaxial graphene on SiC(0001)
    Huang, Han
    Wee, Andrew Thye Shen
    JOURNAL OF MATERIALS RESEARCH, 2014, 29 (03) : 447 - 458
  • [22] Nucleation of Epitaxial Graphene on SiC(0001)
    Robinson, Joshua
    Weng, Xiaojun
    Trumbull, Kathleen
    Cavalero, Randall
    Wetherington, Maxwell
    Frantz, Eric
    LaBella, Michael
    Hughes, Zachary
    Fanton, Mark
    Snyder, David
    ACS NANO, 2010, 4 (01) : 153 - 158
  • [23] Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy
    Brault, J
    Bellet-Amalric, E
    Tanaka, S
    Enjalbert, F
    Dang, DL
    Sarigiannidou, E
    Rouviere, JL
    Feuillet, G
    Daudin, B
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 240 (02): : 314 - 317
  • [24] Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments
    Luxmi
    Srivastava, N.
    Feenstra, R. M.
    Fisher, P. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (04): : C5C1 - C5C7
  • [25] Atomistic insight into the initial stage of graphene formation on SiC(0001) surfaces
    Boero, Mauro
    Imoto, Fumihiro
    Oshiyama, Atsushi
    PHYSICAL REVIEW MATERIALS, 2022, 6 (09)
  • [26] Selective formation of ABC-stacked graphene layers on SiC(0001)
    Norimatsu, Wataru
    Kusunoki, Michiko
    PHYSICAL REVIEW B, 2010, 81 (16):
  • [27] Formation of a Buffer Layer for Graphene on C-Face SiC{0001}
    He, Guowei
    Srivastava, N.
    Feenstra, R. M.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (04) : 819 - 827
  • [28] Formation of a Buffer Layer for Graphene on C-Face SiC{0001}
    Guowei He
    N. Srivastava
    R. M. Feenstra
    Journal of Electronic Materials, 2014, 43 : 819 - 827
  • [29] Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
    Park, Jeongho
    Mitchel, William C.
    Grazulis, Lawrence
    Smith, Howard E.
    Eyink, Kurt G.
    Boeckl, John J.
    Tomich, David H.
    Pacley, Shanee D.
    Hoelscher, John E.
    ADVANCED MATERIALS, 2010, 22 (37) : 4140 - +
  • [30] Graphene growth on h-BN by molecular beam epitaxy
    Garcia, Jorge M.
    Wurstbauer, Ulrich
    Levy, Antonio
    Pfeiffer, Loren N.
    Pinczuk, Aron
    Plaut, Annette S.
    Wang, Lei
    Dean, Cory R.
    Buizza, Roberto
    Van Der Zande, Arend M.
    Hone, James
    Watanabe, Kenji
    Taniguchi, Takashi
    SOLID STATE COMMUNICATIONS, 2012, 152 (12) : 975 - 978