共 50 条
- [42] Integration of SALICIDE process for deep-submicron CMOS technology: effect of nitrogen/argon-amorphized implant on SALICIDE formation MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 51 (1-3): : 274 - 279
- [45] Advanced failure analysis of deep-submicron CMOS device dopant profiles using scanning kelvin probe microscopy ISTFA '98: PROCEEDINGS OF THE 24TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 1998, : 31 - 39
- [46] Impact analysis of deep-submicron CMOS technologies on the voltage and temperature independence of a time-domain sensor interface Analog Integrated Circuits and Signal Processing, 2015, 82 : 285 - 296
- [48] A SINGLE-CHIP OSCILLATOR BASED ON A DEEP-SUBMICRON GAP CMOS-MEMS RESONATOR ARRAY WITH A HIGH-STIFFNESS DRIVING SCHEME 2015 TRANSDUCERS - 2015 18TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS), 2015, : 133 - 136
- [49] A new failure mechanism on analog I/O cell under ND-mode ESD stress in deep-submicron CMOS technology IPFA 2005: Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits, 2005, : 209 - 212
- [50] Passive voltage contrast technique for rapid in-line characterization and failure isolation during development of deep-submicron ASIC CMOS technology ISTFA '98: PROCEEDINGS OF THE 24TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 1998, : 221 - 225