Stress evolution in evaporated HfO2/SiO2 multilayers

被引：0

作者：

Li, Jingping ^{[1
]}

Fang, Ming ^{[1
]}

He, Hongbo ^{[1
]}

Shao, Jianda ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China

来源：

6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTICAL TEST AND MEASUREMENT TECHNOLOGY AND EQUIPMENT | 2012年 / 8417卷

关键词：

multilayers; in situ; growth stress; substrate material; structural feature; RESIDUAL-STRESS; FILMS;

D O I：

10.1117/12.971422

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Hafnium oxide/silicon dioxide (HfO2/SiO2) multilayers were prepared by electron-beam evaporation. The total force per unit width (F/w) during and after deposition was determined by the change of the substrate curvature measured in situ. Stress induced by water absorption is a major component of the film stress evolution in atmospheric environment. Growth stress was analyzed to understand the role of the sublayers and the influence of the underlayers' structural features. The substrate material affects the stress evolutions in both HfO2 films and SiO2 films. The structural feature of the HfO2 layer onto which SiO2 was deposited has a significant effect on the stress evolution of the SiO2 layer.

引用

页数：6

共 50 条

[41] Investigations on SiO2/HfO2 mixtures for nanosecond and femtosecond pulses
Jensen, Lars O.
Mende, Mathias
Blaschke, Holger
Ristau, Detlev
Duy Nguyen
Emmert, Luke
Rudolph, Wolfgang
LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 2010, 2010, 7842
[42] Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
Ming, Z
Nakajima, K
Suzuki, M
Kimura, K
Uematsu, M
Torii, K
Kamiyama, S
Nara, Y
Yamada, K
APPLIED PHYSICS LETTERS, 2006, 88 (15)
[43] Thermal decomposition behavior of the HfO2/SiO2/Si system
Sayan, S. (garf@rutchem.rutgers.edu), 1600, American Institute of Physics Inc. (94):
[44] Impurity segregation and ordering in Si/SiO2/HfO2 structures
Marinopoulos, A. G.
van Benthem, K.
Rashkeev, S. N.
Pennycook, S. J.
Pantelides, S. T.
PHYSICAL REVIEW B, 2008, 77 (19):
[45] Characterization of HfO2 and Hafnium Silicate Films on SiO2/Si
Bersch, E.
Di, M.
Consiglio, S.
Clark, R. D.
Leusink, G. J.
Diebold, A. C.
FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009, 2009, 1173 : 55 - +
[46] Diffusion reaction of oxygen in HfO2/SiO2/Si stacks
Ferrari, S.
Fanciulli, M.
JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (30): : 14905 - 14910
[47] High-reflectivity HfO2/SiO2 ultraviolet mirrors
Torchio, P
Gatto, A
Alvisi, M
Albrand, G
Kaiser, N
Amra, C
APPLIED OPTICS, 2002, 41 (16) : 3256 - 3261
[48] Thermal decomposition behavior of the HfO2/SiO2/Si system
Sayan, S
Garfunkel, E
Nishimura, T
Schulte, WH
Gustafsson, T
Wilk, GD
JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) : 928 - 934
[49] Charge trapping in SiO2/HfO2/TiN gate stack
Lime, F
Ghibaudo, G
Guillaumot, B
MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) : 1445 - 1448
[50] Laser damage testing of SiO2 and HfO2 thin films
Di Giulio, M
Alvisi, M
Perrone, MR
Protopapa, ML
Valentini, A
Vasanelli, L
ADVANCES IN OPTICAL INTERFERENCE COATINGS, 1999, 3738 : 337 - 346

← 1 2 3 4 5 →