Stress evolution in evaporated HfO2/SiO2 multilayers

被引：0
|
作者：
Li, Jingping [1 ]
Fang, Ming [1 ]
He, Hongbo [1 ]
Shao, Jianda [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
来源：
6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTICAL TEST AND MEASUREMENT TECHNOLOGY AND EQUIPMENT | 2012年 / 8417卷
关键词：
multilayers; in situ; growth stress; substrate material; structural feature; RESIDUAL-STRESS; FILMS;
D O I：
10.1117/12.971422
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Hafnium oxide/silicon dioxide (HfO2/SiO2) multilayers were prepared by electron-beam evaporation. The total force per unit width (F/w) during and after deposition was determined by the change of the substrate curvature measured in situ. Stress induced by water absorption is a major component of the film stress evolution in atmospheric environment. Growth stress was analyzed to understand the role of the sublayers and the influence of the underlayers' structural features. The substrate material affects the stress evolutions in both HfO2 films and SiO2 films. The structural feature of the HfO2 layer onto which SiO2 was deposited has a significant effect on the stress evolution of the SiO2 layer.
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页数：6
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