The effect of the partial pressure of H2 gas and atomic hydrogen on diamond films deposited using CH30H/H2O gas

被引：0

作者：

Lee, KJ ^{[1
]}

Koh, JG

Shin, JS

Kwon, KH

机构：

[1] Soongsil Univ, Dept Phys, Seoul 156013, South Korea

[2] Daejeon Univ, Dept Adv Mat Engn, Taejon 300716, South Korea

[3] Hyejeon Coll, Dept Ind Engn, Hongsung 350702, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 48卷 / 01期

关键词：

HFCVD; CH3OH/H2O gas; diamond; OES; H-alpha; H-beta; H-gamma;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Diamond films were deposited on Si(100) substrates by hot filament chemical vapor deposition (HFCVD) with a CH3OH/H2O gas mixture while changing the gas ratio. The films were analyzed with scanning electron microscopy (SEM), Raman spectroscopy, and optical emission spectroscopy (OES). The diamond films were grown with CH3OH being 52% by volume of the gas mixture. The effect of atomic hydrogen on the film was different from that of the CH4/H-2 gas mixture. Analysis with OES during film growth indicated that among the thermally dissociated hydrogen radicals, only H. contributed to the etching of graphite.

引用

页码：141 / 145

页数：5

共 50 条

[41] H2 (hydrogen) gas can be used as a brain resuscitation gas
Sano, Motoaki
JOURNAL OF PHARMACOLOGICAL SCIENCES, 2015, 128 (03) : S74 - S74
[42] GAS PHASE KINETICS OF H + H + H2-! 2 H2 - PHYS
HAM, DO
TRAINOR, DW
KAUFMAN, F
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1970, (SEP): : 68 - &
[43] On the mechanism of H atom production in hot filament activated H2 and CH4/H2 gas mixtures
Comerford, Dane W.
Smith, James A.
Ashfold, Michael N. R.
Mankelevich, Yuri A.
JOURNAL OF CHEMICAL PHYSICS, 2009, 131 (04):
[44] Computational Astrochemistry: H2O - H2 collisions
Zoltowski, Michal
Zuchowski, Piotr
Karska, Agata
XXXVIII POLISH ASTRONOMICAL SOCIETY MEETING, 2018, 7 : 181 - 183
[45] Vibrational quenching of H2O in collision with H2
Faure, A
Wiesenfeld, L
Wernli, M
Valiron, P
PROCEEDINGS OF THE DUSTY AND MOLECULAR UNIVERSE: A PRELUDE TO HERSCHEL AND ALMA, 2005, 577 : 361 - 362
[46] Growth of highly oriented diamond films by the MPCVD technique using CO-H2, CH4-H2 and CH4-N2-H2 gas mixtures
Choi, IH
Weisbecker, R
Barrat, S
Bauer-Grosse, E
DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) : 574 - 580
[47] In2O3 films deposited by spray pyrolysis:: gas response to reducing (CO, H2) gases
Korotcenkov, G
Brinzari, V
Cerneavschi, A
Ivanov, M
Cornet, A
Morante, J
Cabot, A
Arbiol, J
SENSORS AND ACTUATORS B-CHEMICAL, 2004, 98 (2-3) : 122 - 129
[48] The CVD growth of Cu films using H2 as carrier gas
Pi-Jiun Lin
Mao-Chieh Chen
Journal of Electronic Materials, 1999, 28 : 567 - 571
[49] Effect of partial pressure of CO2 and H2O on H2S reaction with limestone
Lin, SY
Suzuki, Y
Hatano, H
KAGAKU KOGAKU RONBUNSHU, 1999, 25 (03) : 421 - 427
[50] The CVD growth of Cu films using H2 as carrier gas
Lin, PJ
Chen, MC
JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (05) : 567 - 571

← 1 2 3 4 5 →