The effect of the partial pressure of H2 gas and atomic hydrogen on diamond films deposited using CH30H/H2O gas

被引：0
|
作者：
Lee, KJ [1 ]
Koh, JG
Shin, JS
Kwon, KH
机构：
[1] Soongsil Univ, Dept Phys, Seoul 156013, South Korea
[2] Daejeon Univ, Dept Adv Mat Engn, Taejon 300716, South Korea
[3] Hyejeon Coll, Dept Ind Engn, Hongsung 350702, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 48卷 / 01期
关键词：
HFCVD; CH3OH/H2O gas; diamond; OES; H-alpha; H-beta; H-gamma;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Diamond films were deposited on Si(100) substrates by hot filament chemical vapor deposition (HFCVD) with a CH3OH/H2O gas mixture while changing the gas ratio. The films were analyzed with scanning electron microscopy (SEM), Raman spectroscopy, and optical emission spectroscopy (OES). The diamond films were grown with CH3OH being 52% by volume of the gas mixture. The effect of atomic hydrogen on the film was different from that of the CH4/H-2 gas mixture. Analysis with OES during film growth indicated that among the thermally dissociated hydrogen radicals, only H. contributed to the etching of graphite.
引用
收藏
页码：141 / 145
页数：5
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