Ultrathin silicon oxide and nitride -: Silicon interface states

被引：1

作者：

Brillson, LJ ^{[1
]}

Young, AP ^{[1
]}

Schäfer, J ^{[1
]}

Niimi, H ^{[1
]}

Lucovsky, G ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

来源：

ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS | 1999年 / 567卷

关键词：

D O I：

10.1557/PROC-567-549

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Local electronic states at nanometer-thick silicon oxide and nitride films on Si can be studied on an unprecedented scale using low-energy cathodoluminescence spectroscopy to observe optical transitions of defect bonding arrangements at ultrathin film interfaces prepared by low-temperature plasma deposition. Our results illustrate significant differences in the dependence of specific defects at the oxide versus nitride interfaces on thermal annealing and hydrogenation.

引用

页码：549 / 558

页数：10

共 50 条

[41] Subsurface reactions of silicon nitride in a highly selective etching process of silicon oxide over silicon nitride
Ito, M
Kamiya, K
Hori, M
Goto, T
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) : 3452 - 3458
[42] Effect of Ultrathin Silicon Oxide and Titanium Nitride Composite Layer on Photogenerated Electron Export
Lan Zixuan
Wang Yilin
Zhao Lei
Ma Zhongquan
[J]. ACTA OPTICA SINICA, 2022, 42 (13)
[43] INTERFACE STATES IN SILICON/SILICON-OXIDE SYSTEM OBSERVED BY THERMALLY STIMULATED CHARGE RELEASE
SAUNDERS, AF
WRIGHT, GT
[J]. ELECTRONICS LETTERS, 1970, 6 (07) : 207 - &
[44] Effects of the final oxidation step on N and O distributions in silicon oxide/nitride/oxide ultrathin films
Salgado, TDM
Radtke, C
Krug, C
de Andrade, J
Baumvol, IJR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (10) : 3788 - 3793
[45] Structure of silicon/oxide and nitride/oxide interfaces
Gritsenko, V. A.
[J]. PHYSICS-USPEKHI, 2009, 52 (09) : 869 - 877
[46] Charge dynamics in silicon nitride/silicon oxide double layers
Zhang, XQ
Sessler, GM
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (18) : 2757 - 2759
[47] Bilayer silicon oxide and silicon nitride thickness OOS elimination
Wen, Qiao Pei
Veera, Sae Tae
Woon, Ho Sin
Huat, Cheer Chua
Onn, Loke Weng
Woon, Chong Hock
[J]. 2015 IEEE 17TH ELECTRONICS PACKAGING AND TECHNOLOGY CONFERENCE (EPTC), 2015,
[48] From Ψ-MOSFET with silicon on oxide to Ψ-MOSFET with silicon carbide on nitride
Ravariu, C
Rusu, A
Ravariu, F
Dobrescu, D
Dobrescu, L
[J]. DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 1268 - 1271
[49] In vivo biostability of CVD silicon oxide and silicon nitride films
Maloney, JM
Lipka, SA
Baldwin, SP
[J]. Micro- and Nanosystems-Materials and Devices, 2005, 872 : 279 - 284
[50] Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
Allen, Thomas G.
Wan, Yimao
Cuevas, Andres
[J]. IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 6 (04): : 900 - 905

← 1 2 3 4 5 →