Ultrathin silicon oxide and nitride -: Silicon interface states

被引：1

作者：

Brillson, LJ ^{[1
]}

Young, AP ^{[1
]}

Schäfer, J ^{[1
]}

Niimi, H ^{[1
]}

Lucovsky, G ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

来源：

ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS | 1999年 / 567卷

关键词：

D O I：

10.1557/PROC-567-549

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Local electronic states at nanometer-thick silicon oxide and nitride films on Si can be studied on an unprecedented scale using low-energy cathodoluminescence spectroscopy to observe optical transitions of defect bonding arrangements at ultrathin film interfaces prepared by low-temperature plasma deposition. Our results illustrate significant differences in the dependence of specific defects at the oxide versus nitride interfaces on thermal annealing and hydrogenation.

引用

页码：549 / 558

页数：10

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