40-gbit/s TDM transmission technologies based on ultra-high-speed IC's

被引:32
|
作者
Miyamoto, Y [1 ]
Yoneyama, M [1 ]
Otsuji, T [1 ]
Yonenaga, K [1 ]
Shimizu, N [1 ]
机构
[1] NTT, Network Innovat Labs, Yokosuka, Kanagawa 2390847, Japan
关键词
broad-band photodiode; InP high electron mobility transistor (HEMT); optical fiber communication;
D O I
10.1109/4.782083
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-mu m-gate-length InP high electron mobility transistor IC's and a scheme for upgrading toward a terabit-per second capacity system. A 40-Gbit/s, 300-km, in-line transmission experiment and a dispersion-tolerant 40-Gbit/s duobinary transmission experiment are described as 40-Gbit/s single carrier system applications on dispersion-shifted fiber. An ultra-high-speed receiver configuration using a high-output-power photodiode is introduced to realize fully electrical receiver operation beyond 40 Gbit/s, The high-sensitivity operation of the optical receiver (-27.6 dBm @ BER = 10(-9)) is demonstrated at a data bit rate of 50 Gbit/s for the first time using a unitraveling carrier photodiode, A dense wavelength division multiplexing (DWDM) system operating up to terabits per second can be easily realized on a zero-dispersion flattened transmission line using ultra-high-speed TDM channels of 40 Gbit/s and beyond. An experiment demonstrates 1.04-bit/s DWDM transmission based on 40-Gbit/s TDM channels with high optical spectrum density (0.4 bit/s/Hz) without dispersion compensation.
引用
收藏
页码:1246 / 1253
页数:8
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