40-Gbit/s ICs for future lightwave communications systems

被引：17
|
作者：
Otsuji, T
Sano, E
Imai, Y
Enoki, T
机构：
来源：
GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/GAAS.1996.567627
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews recent advances in 40-Gbit/s class analog and digital ICs developed at our laboratories for future lightwave communications systems. A 0.1-mu m gate InAlAs/InGaAs HEMTs with InP recess etch stopper was adopted mainly for IC fabrication Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing and amplifying operation at 40 Gbit/s.
引用
收藏
页码：14 / 17
页数：4
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