Experimental and theoretical studies into the limits to peak power in GaAs-based diode lasers

被引：0
|
作者：
Crump, P. [1 ]
Wenzel, H. [1 ]
Kaul, T. [1 ]
Winterfeldt, M. [1 ]
Platz, R. [1 ]
Erbert, G. [1 ]
Traenkle, G. [1 ]
机构：
[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
来源：
2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2016年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An overview is presented of progress in studies to diagnose and address limits to peak power in high power diode lasers. Key tenns in advanced structures include canier losses in the p-side waveguide, self-heating effects in the quantum well, and longitudinal spatial hole-burning.
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页数：2
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