On the reliability of pulse power saturation models for broad-area GaAs-based lasers

With short current pulses, GaAs-based lasers can achieve high output powers if self-heating and catastrophic optical damage are suppressed. However, the pulse power is still severely limited by internal saturation mechanisms. Over the past decade, various power loss mechanisms have been identified by numerical laser simulation but published conclusions differ even for the same laser diode. We here investigate the reliability of such simulations and find that the error range remains relatively small if all saturation mechanisms are considered simultaneously in a self-consistent model, including a realistic hole mobility. Accurate pulse power predictions are demonstrated by simulating measurements on two different laser structures without making material parameter adjustments.