A 427 mW, 20 % compact W-band InPHEMT MMIC power amplifier

被引：47
|
作者：
Ingram, DL [1 ]
Chen, YC [1 ]
Kraus, J [1 ]
Brunner, B [1 ]
Allen, B [1 ]
Yen, HC [1 ]
Lau, KF [1 ]
机构：
[1] TRW Co Inc, RF Prod Ctr, Redondo Beach, CA 90278 USA
来源：
1999 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM - DIGEST OF PAPERS | 1999年
关键词：
D O I：
10.1109/RFIC.1999.805247
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Presented is the development of a 2-stage 427mW (26.3 dBm), 19% PAE compact W-band InP monolithic microwave integrated circuit (MMIC) power amplifier with an associated power gain of 8.9 dB; 20% PAE with output power of 407 mW (26.1 dBm) was achieved when the amplifier was biased for optimal efficiency. These MMIC amplifiers were fabricated with a 2-mil thick substrate using 0.15-mu m InGaAs/lnAIAs/InP HEMT technology. InP amplifier, though operates at lower drain voltage, but it delivers compatible power with double the PAE of its GaAs counter-part.
引用
收藏
页码：95 / 98
页数：4
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