Formation and evolution of F nanobubbles in amorphous and crystalline Si

被引：19
|
作者：
Boninelli, S. [1 ,2 ]
Impellizzeri, G. [1 ,2 ]
Mirabella, S. [1 ,2 ]
Priolo, F. [1 ,2 ]
Napolitani, E. [3 ,4 ]
Cherkashin, N. [5 ]
Cristiano, F. [6 ]
机构：
[1] Univ Catania, MATIS CNR, INFM, I-95123 Catania, Italy
[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[3] Univ Padua, MATIS CNR, INFM, I-35131 Padua, Italy
[4] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy
[5] CEMES CNRS, F-31055 Toulouse, France
[6] CNRS, LAAS, F-31077 Toulouse, France
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 06期
关键词：
D O I：
10.1063/1.2969055
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation and evolution of F-induced nanobubbles in Si was investigated. Si samples were preamorphized, implanted with F, and partially regrown by solid phase epitaxy (SPE). It is shown that nanobubbles are formed already in the amorphous side of partially regrown samples and are then incorporated in crystalline Si during SPE. The bubbles are interpreted as the result of the diffusion and coalescence of F atoms and dangling bonds already in the amorphous matrix. During high temperature annealing after SPE, F outdiffuses; correspondingly, the bubbles partially dissolve and transform from spherical- to cylinder-shaped bubbles. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] FORMATION OF METALLIC, CRYSTALLINE NISI2 THIN-FILM ON AMORPHOUS SIO2/SI
    LUO, L
    NASTASI, M
    MAGGIORE, CJ
    PINIZZOTTO, RF
    YANG, H
    NAMAVAR, F
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) : 4107 - 4109
  • [42] ION MIXING IN AMORPHOUS AND CRYSTALLINE SI/GE LAYERED STRUCTURES
    LI, J
    HONG, QZ
    VIZKELETHY, G
    MAYER, JW
    COZZOLINO, C
    XIA, W
    ZHU, B
    HSU, SN
    LAU, SS
    HOLLANDER, B
    BUTZ, R
    MANTL, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 989 - 993
  • [43] STRUCTURAL MODEL FOR INTERFACE BETWEEN AMORPHOUS AND CRYSTALLINE SI OR GE
    SPAEPEN, F
    ACTA METALLURGICA, 1978, 26 (07): : 1167 - 1177
  • [44] Amorphous-crystalline transition at the Ir/Si(100) interface
    Ouyang, CP
    Chang, JJ
    Wen, JF
    Tien, LC
    Hwang, J
    Pi, TW
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 6248 - 6251
  • [45] Ion beam mixing at crystalline and amorphous Fe/Si interfaces
    Milinovic, V.
    Zhang, K.
    Bibic, N.
    Leib, K. P.
    Milosavljevic, M.
    Sahoo, P. K.
    PHYSICS OF IONIZED GASES, 2006, 876 : 209 - +
  • [46] Bridging energy bands to the crystalline and amorphous states of Si QDs
    Alessi, Bruno
    Macias-Montero, Manuel
    Maddi, Chiranjeevi
    Maguire, Paul
    Svrcek, Vladimir
    Mariotti, Davide
    FARADAY DISCUSSIONS, 2020, 222 (00) : 390 - 404
  • [47] Simulations of the mechanical properties of crystalline, nanocrystalline, and amorphous SiC and Si
    Ivashchenko, V. I.
    Turchi, P. E. A.
    Shevchenko, V. I.
    PHYSICAL REVIEW B, 2007, 75 (08)
  • [48] MAGNETIZATION OF AMORPHOUS AND CRYSTALLINE CO-SI-B ALLOYS
    KULIK, T
    MATYJA, H
    LISOWSKI, B
    MATERIALS SCIENCE AND ENGINEERING, 1988, 99 : 77 - 80
  • [49] Tribology of amorphous, nanocrystalline, and crystalline slabs of Si, C, and SiC
    Ivashchenko, VI
    Turchi, PEA
    Gonis, A
    Shevchenko, VI
    Ivashchenko, LA
    PHYSICAL REVIEW B, 2005, 72 (11)
  • [50] Magnetization of amorphous and crystalline Co-Si-B alloys
    Kulik, T.
    Matyja, H.
    Lisowski, B.
    Materials science and engineering, 1988, 99 : 77 - 80
12345